STP19NM50N STMicroelectronics, STP19NM50N Datasheet - Page 12

• Manufacturer Part Number: STP19NM50N
• Description: MOSFET N-CH 500V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP19NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 9 A, 14 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10577-5

Package mechanical data
12/15
Dim.
øR
A1
øP
b1
b2
L1
L2
A
D
E
S
b
c
e
L
Doc ID 17079 Rev 1
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
2.0
3.0
1.0
STF19NM50N, STP19NM50N, STW19NM50N
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50