IXFC52N30P IXYS, IXFC52N30P Datasheet - Page 2

• Manufacturer Part Number: IXFC52N30P
• Description: MOSFET N-CH 300V 24A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFC52N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3490pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.075
• Ciss, Typ, (pf): 3490
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 100
• Rthjc, Max, (ºc/w): 1.25
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 52A, V
= 25A, -di/dt = 100A/μs
= 100V, V
= 10V, I
= 0V, V
= 10V, V
= 4Ω (External)
= 10V, V
= 0V
GS
DS
D
DS
DS
GS
= 0V, Note 1
= 26A, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 52A
= 26A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
20
Min.
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
3490
0.21
800
550
130
110
Typ.
Typ.
30
24
22
60
20
25
53
7
1.25 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
200 ns
150
1.5
52
°C/W
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS220
6,727,585
6,771,478 B2 7,071,537
IXFC52N30P
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
TM
7,005,734 B2
7,063,975 B2
(IXFC) Outline
Ref: IXYS CO 0177 R0
7,157,338B2