STP11NM60 STMicroelectronics, STP11NM60 Datasheet - Page 15

• Manufacturer Part Number: STP11NM60
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2773-5

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
6
Revision history
Table 8.
09-Sep-2004
31-Aug-2006
21-Dec-2006
10-Jun-2005
12-Jan-2007
26-Jul-2006
Date
Revision history
Revision
1
2
3
4
5
6
First Release
Typing error, wrong description
The document has been reformatted, no content change
Typo mistake on order code
Various changes on “Test conditions” for
Order code has been corrected
Changes
Table 5.
Revision history
and
Table 6.
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