IXTT50P085 IXYS, IXTT50P085 Datasheet - Page 3

• Manufacturer Part Number: IXTT50P085
• Description: MOSFET P-CH 85V 50A TO-268
• Manufacturer: IXYS

Specifications of IXTT50P085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): -85
• Id(cont), Tc=25°c, (a): -50
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 180
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2005 IXYS All rights reserved
-50
-45
-40
-35
-30
-25
-20
-15
-10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
-5
0
2
1
0
0
0
0
V
GS
Fig. 5. R
Fig. 1. Output Characte ris tics
Fig. 3. Output Characte ris tics
= -10V
-0.5
-25
-1
V
GS
DS(on)
= -10V
@ 125 Deg. C
V
@ 25 Deg. C
I
Value vs . I
GS
V
V
-50
D
-9V
-2
-1
D S
D S
- Amperes
Norm alize d to I
= -10V
-9V
- Volts
- Volts
T
-1.5
J
-75
-3
= 125ºC
D
T
-6V
J
-8V
-7V
-5V
= 25ºC
-100
-2
-4
-8V
-7V
-6V
-5V
D25
-2.5
-125
-5
-140
-120
-100
1.8
1.6
1.4
1.2
0.8
0.6
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-80
-60
-40
-20
-5
2
1
0
0
-50
-50
Fig. 4. R
Fig. 2. Exte nded Output Characteristics
0
V
-2
-25
-25
GS
Fig. 6. Drain Curre nt vs. Cas e
= -10V
DS(on)
V
-4
Junction Te m pe rature
GS
T
0
T
0
C
J
= -10V
- Degrees Centigrade
Norm alize d to I
-6
- Degrees Centigrade
Te m pe rature
@ 25 de g. C
25
25
I
-8
D
V
= -50A
D S
-9V
-8V
-7V
50
50
IXTH 50P085
-6V
-5V
-10
IXTT 50P085
- Volts
-12
75
75
D25
I
-14
D
= -25A
100
100
Value vs.
-16
125
125
-18
150
150
-20