IXTT26N50P IXYS, IXTT26N50P Datasheet
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Manufacturer Part Number
IXTT26N50P
Description
MOSFET N-CH 500V 26A TO-268
Specifications of IXTT26N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
65
Trr, Typ, (ns)
300
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
© 2006 IXYS All rights reserved
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuos
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
400
150
300
260
1.0
5.5
26
78
26
40
10
6
5
±100
250
230
Max.
5.5
25
V/ns
m Ω
mJ
nA
µA
µA
° C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
J
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
Features
l
l
l
Advantages
l
l
l
TO-3P (IXTQ)
TO-268 (IXTT)
V
I
R
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
DS(on)
DSS
G
G
G = Gate
S = Source
D
D
G
S
G
S
≤ ≤ ≤ ≤ ≤
=
=
S
S
500
230 mΩ Ω Ω Ω Ω
26
D = Drain
TAB = Drain
DS99206E(12/05)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXTT26N50P
IXTT26N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.0 ≤ DSS 400 -55 ...
... A/µ 100V PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. ...
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.1 = 10V 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 -50 = 13A Value 125º 25º ...
... Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 25º 5 25º 0.8 0.9 1 1.1 0 100 10 1 ...
... TO-268 (IXTT) Outline © 2006 IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS 1 10 ...
Related keywords
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