IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet

IRF3805S-7PPBF

Manufacturer Part Number

IRF3805S-7PPBF

Description

MOSFET N-CH 55V 160A D2PAK-7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF3805S-7PPBF.pdf (11 pages)

Specifications of IRF3805S-7PPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.6 mOhm @ 140A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

160A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

200nC @ 10V

Input Capacitance (ciss) @ Vds

7820pF @ 25V

Power - Max

300W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (6 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

240A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

2.6mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

240 A

Power Dissipation

300 W

Mounting Style

SMD/SMT

Gate Charge Qg

130 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

Description

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

HEXFET

This HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

@ 10V

(Package Limited)

IRF3805S-7PPbF

IRF3805L-7PPbF

300 (1.6mm from case )

HEXFET

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

-55 to + 175

Max.

1000

± 20

240

170

160

300

440

680

2.0

Power MOSFET

DS(on)

Max.

0.50

–––

DSS

= 160A

= 2.6m

PD - 97205B

= 55V

Units

W/°C

°C/W

°C

‰

Related parts for IRF3805S-7PPBF

IRF3805S-7PPBF Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance j R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com IRF3805S-7PPbF IRF3805L-7PPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 97205B ® ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Limited By Package 200 150 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tstart = 150°C. 1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 500 TOP Single Pulse BOTTOM 1% Duty Cycle ...

Page 8

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 10

D Pak - 7 Pin Part Marking Information 2 D Pak - 7 Pin Tape and Reel Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to ...

Page 11

TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ IR ...

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