IXFT14N80P IXYS, IXFT14N80P Datasheet
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Manufacturer Part Number
IXFT14N80P
Description
MOSFET N-CH 800V 14A TO-268
Specifications of IXFT14N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
720 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Resistance Drain-source Rds (on)
0.7 Ohms
Continuous Drain Current
14 A
Power Dissipation
400 W
Mounting Style
SMD/SMT
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.72
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
61
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
D
= 250μA
= 4 mA
G
= 0.5 I
DS
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
JM
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
800
800
500
400
150
300
260
5.5
14
40
30
10
7
2
6
±100
Max.
5.5
25
720 mΩ
1
V/ns
mA
mJ
mJ
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
t
TO-247 (IXFH)
TO-3P (IXFQ)
TO-268 (IXFT)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
Advantages
PLUS220 (IXFV)
D25
rr
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
D
D
S
S
G
= 800
=
≤ ≤ ≤ ≤ ≤ 720 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ms
G
S
S
D = Drain
TAB = Drain
14
DS99593E(07/06)
D (TAB)
D (TAB)
D (TAB)
A
V
D (TAB)
(TAB)
Related parts for IXFT14N80P
IXFT14N80P Summary of contents
... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 500 ≤ ...
... A/μ 100V RM R PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXFT 14N80P IXFV 14N80P IXFV 14N80PS Characteristic Values (T = 25° ...
... V - Volts DS Fig Normalized to I DS(on) Drain Current 2 10V 2.6 GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved IXFT 14N80P IXFV 14N80P IXFV 14N80PS 27 = 10V 3 10V GS 2.8 2.5 6V 2.2 5V 1.9 1.6 1.3 1 0 Value vs ...
... Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.3 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXFT 14N80P IXFV 14N80P IXFV 14N80PS 5 25º 0.8 0.9 1 1.1 1.000 C iss 0 ...
... TO-3P-3L PACKAGE Outline 1. GATE 2. DRAIN (COLLECTOR) 3. SOURCE (EMITTER) 4. DRAIN (COLLECTOR) ALL METAL AREA ARE TIN PLATED. Ref: IXYS CO 0170 RA © 2006 IXYS All rights reserved IXFT 14N80P IXFV 14N80P IXFV 14N80PS PLUS220 (IXFV) Outline IXFH 14N80P IXFQ 14N80P ...
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