IXFH20N80P IXYS, IXFH20N80P Datasheet - Page 5

• Manufacturer Part Number: IXFH20N80P
• Description: MOSFET N-CH 800V 20A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH20N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 4685pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.52
• Ciss, Typ, (pf): 4685
• Qg, Typ, (nc): 86
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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PLUS220 (IXFV) Outline
TO-247AD (IXFH) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
2
20.80
15.75
19.81
3
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Millimeter
4.7
2.2
2.2
1.0
.4
BSC
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205
0.232
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
Inches
BSC
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Package Outline Drawings
IXFV 20N80P
IXFH 20N80P
TO-268 (IXFT) Outline
PLUS220SMD (IXFV_S) Outline
IXYS REF: F_20N80P (7J) 03-01-06-A.XLS
IXFV 20N80PS
IXFT 20N80P