STP150NF55 STMicroelectronics, STP150NF55 Datasheet - Page 11

• Manufacturer Part Number: STP150NF55
• Description: MOSFET N-CH 55V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP150NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6117-5

STB150NF55 - STP150NF55 - STW150NF55
4
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 20. Gate charge test circuit
Figure 22. Unclamped Inductive load test
Figure 24. Switching time waveform
circuit
Test circuit
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