IXTT82N25P IXYS, IXTT82N25P Datasheet - Page 5

• Manufacturer Part Number: IXTT82N25P
• Description: MOSFET N-CH 250V 82A TO-268
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTT82N25P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 82A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 142nC @ 10V
• Input Capacitance (ciss) @ Vds: 4800pF @ 25V
• Power - Max: 500W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 82 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 82
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): 4800
• Qg, Typ, (nc): 142
• Trr, Typ, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.25
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 . 0 0
0 . 1 0
0 . 0 1
1
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Puls e W idth - millis ec onds
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