STB24NM65N STMicroelectronics, STB24NM65N Datasheet - Page 12

• Manufacturer Part Number: STB24NM65N
• Description: MOSFET N-CH 650V 19A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB24NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 19 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7002-2

Package mechanical data
12/19
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
b
c
e
F
L
15.25
4.40
0.61
1.14
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.393
0.244
0.094
0.511
0.137
0.173
0.024
0.044
0.019
0.094
0.194
0.048
0.147
0.104
Min
0.6
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62