IRFP3077PBF International Rectifier, IRFP3077PBF Datasheet

MOSFET N-CH 75V 120A TO-247AC

IRFP3077PBF

Manufacturer Part Number
IRFP3077PBF
Description
MOSFET N-CH 75V 120A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP3077PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 50V
Power - Max
340W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
2.8mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
200 A
Power Dissipation
340 W
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP3077PBF
Manufacturer:
FTDI
Quantity:
12 000
Company:
Part Number:
IRFP3077PBF
Quantity:
9 000
Company:
Part Number:
IRFP3077PBF
Quantity:
3 800
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
I
P
V
dV/dt
T
T
E
I
E
R
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Worldwide Best R
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
SOA
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
DS(on)
in TO-247
Parameter
Parameter
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
G
G ate
G
S
D
IRFP3077PbF
See Fig. 14, 15, 22a, 22b,
Typ.
0.24
–––
–––
V
R
I
I
D
D
10lbxin (1.1Nxm)
DSS
DS(on)
-55 to + 175
(Silicon Limited)
(Package Limited)
D
TO-247AC
Drain
200c
140c
Max.
HEXFET Power MOSFET
120
850
340
± 20
300
200
2.3
2.5
D
typ.
max.
Max.
0.44
G
–––
40
D
S
Source
200A c
2.8m :
3.3m :
120A
S
75V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
3/3/08
1

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IRFP3077PBF Summary of contents

Page 1

... Symbol R Junction-to-Case j θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient j θJA www.irf.com ate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter IRFP3077PbF HEXFET Power MOSFET V 75V D DSS R typ. 2.8m : DS(on) max. 3. 200A c D (Silicon Limited) I 120A S (Package Limited ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 25V ≤ ...

Page 4

175°C 100.0 10 25°C 1.0 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 240 LIMITED BY PACKAGE 200 160 120 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 10 Allowed avalanche Current vs ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 900 1000 ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

EXAMPLE: THIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 EMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" TO-247AC packages ...

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