IXTH360N055T2 IXYS, IXTH360N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH360N055T2
• Description: MOSFET N-CH 55V 360A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH360N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 20000pF @ 25V
• Power - Max: 935W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0024
• Ciss, Typ, (pf): 20000
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): 78
• Pd, (w): 935
• Rthjc, Max, (k/w): 0.16
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
50
80
60
40
20
0
0
0.3
2.0
0
f
= 1 MHz
0.4
2.5
5
0.5
3.0
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
T
0.6
Fig. 11. Capacitance
J
= 150ºC
3.5
15
Intrinsic Diode
T
V
J
GS
= 150ºC
V
0.7
V
- 40ºC
SD
DS
25ºC
- Volts
4.0
- Volts
20
- Volts
C iss
C oss
C rss
0.8
4.5
25
T
0.9
J
= 25ºC
5.0
30
1.0
5.5
35
1.1
1.2
6.0
40
1,000
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
DS(on)
External Lead Current Limit
T
T
Single Pulse
V
I
I
J
C
D
G
20
DS
= 175ºC
= 180A
= 10mA
= 25ºC
= 27.5V
Limit
50
Fig. 12. Forward-Bias Safe Operating Area
40
60
100
Fig. 8. Transconductance
Fig. 10. Gate Charge
80
Q
G
150
I
- NanoCoulombs
D
V
100
- Amperes
DS
10
- Volts
IXTH360N055T2
IXTT360N055T2
120
200
140
250
160
IXYS REF: T_360N055T2(V8)7-14-09
180
T
J
300
= - 40ºC
150ºC
25ºC
25µs
100µs
1ms
10ms
100ms
200
DC
220
350
100