IXKH30N60C5 IXYS, IXKH30N60C5 Datasheet

MOSFET N-CH 600V 30A TO247AD

IXKH30N60C5

Manufacturer Part Number
IXKH30N60C5
Description
MOSFET N-CH 600V 30A TO247AD
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet

Specifications of IXKH30N60C5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 10V
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
310 W
Mounting Style
Through Hole
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.125
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
53
Trr, Max, (ns)
-
Trr, Typ, (ns)
430
Pd, (w)
310
Rthjc, Max, (k/w)
0.4
Visol, Rms, (v)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXKH30N60C5
Manufacturer:
IXYS
Quantity:
18 000
CoolMOS
N-Channel Enhancement Mode
Low R
Ultra low gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
thJC
g
gs
gd
DSon
, High V
Conditions
T
T
T
single pulse
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 16 A; R
= 25°C
= 90°C
= 25°C
= 600 V; V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 10 V; V
GS
™ 1)
; I
DSS
D
DS
G
D
= 1.1 mA
DS
= 3.3 Ω
= 16 A
= 100 V
GS
DS
MOSFET
I
= 400 V
D
Power MOSFET
= 0 V
= 0 V
DS
= 11 A; T
= 400 V; I
C
T
T
= 25°C
VJ
VJ
D
DS
(T
= 25°C
= 125°C
= 16 A
= 0...480 V
VJ
= 25°C, unless otherwise specifi ed)
min.
2.5
Characteristic Values
2500
Maximum Ratings
typ.
110
120
20
53
12
18
15
50
3
5
5
G
max.
± 20
600
708
125
100
1.2
3.5
0.4
30
21
50
70
2
S
V/ns
D
K/W
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
ns
ns
ns
ns
V
V
A
A
V
I
V
R
TO-247 AD
Features
• fast CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
D25
4
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
- Low thermal resistance
(SMPS)
DSS
DS(on) max
th
inductive switching (UIS)
due to reduced chip thickness
generation
1)
CoolMOS
Infi neon Technologies AG.
G
IXKH 30N60C5
D
S
=
= 600 V
= 0.125 Ω
™ 1)
is a trademark of
power MOSFET
30 A
20090209d
D(TAB)
1 - 4

Related parts for IXKH30N60C5

IXKH30N60C5 Summary of contents

Page 1

... 400 3.3 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved G Maximum Ratings 600 ± 708 = 25°C C 1.2 = 0...480 Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. ...

Page 2

... VJ T stg M mounting torque d Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. 16 0.9 1.2 ...

Page 3

... TO-247 AD Outline 350 300 250 200 150 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Symbol Ø ØP1 120 T = 25°C J 105 5 4 160 [V] DS Fig. 2 Typ. output characteristics ...

Page 4

... V [V] SD Fig. 7 Forward characteristic of reverse diode 800 600 400 200 100 140 T [°C] j Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 0 0.3 0.2 typ -60 - 100 T [°C] j Fig. 5 Drain-source on-state resistance ...

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