IXTH41N25 IXYS, IXTH41N25 Datasheet - Page 4
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IXTH41N25
Manufacturer Part Number
IXTH41N25
Description
MOSFET N-CH 250V 41A TO-247A
Manufacturer
IXYS
Datasheet
1.IXTH41N25.pdf
(4 pages)
Specifications of IXTH41N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
41A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.072 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
41 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
41
Rds(on), Max, Tj=25°c, (?)
0.072
Ciss, Typ, (pf)
3200
Qg, Typ, (nc)
110
Trr, Typ, (ns)
300
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
80
70
60
50
40
30
20
1 20
1 00
1 0
80
60
40
20
0
0
Fig. 9. Source Current vs. Source-To-Drain
0.4
3
0
3.5
Fig. 7. Input Admittance
5
f = 1 M Hz
0.6
Fig. 11. Capacitance
T
T
J
1 0
J
4
= 1 25ºC
= 1 25ºC
-40ºC
25ºC
4.5
V
V
1 5
V
0.8
GS
SD
DS
Voltage
- Volts
- Volts
- Volts
20
5
5.5
25
1
T
C
C
C
J
iss
oss
rss
= 25ºC
30
6
1 .2
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
35
40
1 .4
7
0.01
60
50
40
30
20
1 0
0.1
0
1 0
8
6
4
2
0
1
0
Fig. 12. Maximum Transient Thermal
0
1
T
J
V
I
I
= -40ºC
20
Fig. 8. Transconductance
1 25ºC
D
G
D S
= 20.5A
= 1 0mA
25ºC
20
Pulse Width - milliseconds
= 1 25V
Fig. 10. Gate Charge
40
Q
40
G
1 0
I
Resistance
D
- nanoCoulombs
- Amperes
60
60
80
IXTH 41N25
1 00
80
1 00
1 00
1 20
6,534,343
1 000
1 40
1 20