IXTH41N25 IXYS, IXTH41N25 Datasheet - Page 4

• Manufacturer Part Number: IXTH41N25
• Description: MOSFET N-CH 250V 41A TO-247A
• Manufacturer: IXYS

Specifications of IXTH41N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 41
• Rds(on), Max, Tj=25°c, (?): 0.072
• Ciss, Typ, (pf): 3200
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): 300
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
80
70
60
50
40
30
20
1 20
1 00
1 0
80
60
40
20
0
0
Fig. 9. Source Current vs. Source-To-Drain
0.4
3
0
3.5
Fig. 7. Input Admittance
5
f = 1 M Hz
0.6
Fig. 11. Capacitance
T
T
J
1 0
J
4
= 1 25ºC
= 1 25ºC
-40ºC
25ºC
4.5
V
V
1 5
V
0.8
GS
SD
DS
Voltage
- Volts
- Volts
- Volts
20
5
5.5
25
1
T
C
C
C
J
iss
oss
rss
= 25ºC
30
6
1 .2
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
35
40
1 .4
7
0.01
60
50
40
30
20
1 0
0.1
0
1 0
8
6
4
2
0
1
0
Fig. 12. Maximum Transient Thermal
0
1
T
J
V
I
I
= -40ºC
20
Fig. 8. Transconductance
1 25ºC
D
G
D S
= 20.5A
= 1 0mA
25ºC
20
Pulse Width - milliseconds
= 1 25V
Fig. 10. Gate Charge
40
Q
40
G
1 0
I
Resistance
D
- nanoCoulombs
- Amperes
60
60
80
IXTH 41N25
1 00
80
1 00
1 00
1 20
6,534,343
1 000
1 40
1 20