IXTA26P20P IXYS, IXTA26P20P Datasheet

IXTA26P20P

Manufacturer Part Number

IXTA26P20P

Description

MOSFET P-CH 200V 26A TO-263

Manufacturer

IXYS

Series

PolarP™r

Datasheet

1.IXTP26P20P.pdf (6 pages)

Specifications of IXTA26P20P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

170 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

26A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

56nC @ 10V

Input Capacitance (ciss) @ Vds

2740pF @ 25V

Power - Max

300W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.17 Ohms

Drain-source Breakdown Voltage

- 200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

26 A

Power Dissipation

300 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

-200

Id(cont), Tc=25°c, (a)

-26

Rds(on), Max, Tj=25°c, (?)

0.17

Ciss, Typ, (pf)

2740

Qg, Typ, (nc)

Trr, Typ, (ns)

240

Pd, (w)

300

Rthjc, Max, (k/w)

0.42

Package Style

TO-263

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
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PolarP

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

Symbol

dV/dt

Weight

Symbol

D25

GSS

DSS

stg

SOLD

DSS

DGR

GSS

GSM

GS(th)

DS(on)

DSS

= 25°C, unless otherwise specified)

TO-263 (IXTA)

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

Mounting torque

TO-247

TO-3P

TO-220

TO-263

Test Conditions

= 25°C to 175°C

= 25°C to 175°C, R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

= 0V, I

= V

= ±20V, V

= V

= 0V

= -10V, I

, V

DSS

, I

= -250 μA

D(TAB)

≤ V

= -250μA

= 0.5 • I

DSS

= 0V

, T

(TO-3P,TO-220,TO-247)

D25

≤ 175°C

, Note 1

= 1MΩ

Preliminary Technical Information

TO-247 (IXTH)

IXTA26P20P

IXTH26P20P

IXTP26P20P

IXTQ26P20P

= 150°C

-55 ... +175

- 200

- 2.5

Maximum Ratings

Characteristic Values

Min.

1.13/10

- 200

- 26

- 70

- 26

±20

±30

300

175

300

260

1.5

6.0

5.5

3.0

2.5

Typ.

D(TAB)

- 250 μA

±100 nA

- 4.5

Nm/lb.in.

- 10 μA

170 mΩ

Max.

V/ns

°C

TO-220 (IXTP)

TO-3P (IXTQ)

Features:

Applications:

Advantages:

D25

International standard packages

Fast intrinsic diode

Dynamic dV/dt Rated

Avalanche Rated

Rugged PolarP

Low Q

Low Drain-to-Tab capacitance

Low package inductance

- easy to drive and to protect

Hight side switching

Push-pull amplifiers

DC Choppers

Current regulators

Automatic test equipment

Low gate charge results in simple

drive requirement

Improved Gate, Avalanche and

dynamic dV/dt ruggedness

High power density

Fast switching

DS(on)

DSS

G = Gate

S = Source

and R

≤ ≤ ≤ ≤ ≤

ds(on)

- 200V

- 26A

process

characterization

170mΩ Ω Ω Ω Ω

D(TAB)

D = Drain

TAB = Drain

DS99913(10/07)

D(TAB)

Related parts for IXTA26P20P

IXTA26P20P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P TO-247 (IXTH Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 1.5 ≤ 175° 300 -55 ... +175 175 -55 ... +175 300 260 1 ...

Page 2

... I = 0.5 • DSS D D25 20 0.21 0.25 Characteristic Values Min. Typ. 240 2.20 -18.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Max 0.5 °C/W °C/W °C/W Max 104 μC A 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2007 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...

Page 4

... D -28 - 175ºC -24 J -22 -20 -18 -16 -14 -12 - 25ºC J -50 -60 -70 -80 -90 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Fig. 2. Extended Output Characteristics @ 25º -10V GS -9V -8V -7V -6V - -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -26A D -50 -25 ...

Page 5

... J 25ºC 24 150º -5.5 -6 -6 25º -2 100 C iss - 10 C oss C rss - -25 -30 -35 -40 IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P Fig. 8. Transconductance 40º -10 -15 -20 -25 - Amperes D Fig. 10. Gate Charge V = -100V 13A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P 0.1 1 IXYS REF: T_26P20P(B5)10-10-07 10 ...

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