IXFC24N50 IXYS, IXFC24N50 Datasheet
IXFC24N50
Manufacturer Part Number
IXFC24N50
Description
MOSFET N-CH 500V 21A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFC24N50.pdf
(2 pages)
Specifications of IXFC24N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
230
Rthjc, Max, (ºc/w)
0.54
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS220
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dV/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
Weight
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
D
ISOL
DSS
DS(on)
DSS
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
V
V
V
Notes 1 & 2
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= 0.8•V
= 0 V
= ±20 V
= 10 V, I
TM
DM
GS
rr
, di/dt ≤ 100 A/µs, V
, HDMOS
, I
D
D
MOSFETs
= 250uA
= 4mA
DC
DSS
TM
D
, V
= I
G
= 2 Ω
DS
T
t = 1 minute leads-to-tab
= 0
TM
GS
Family
= 1 MΩ
DD
ADVANCE TECHNICAL INFORMATION
(T
≤ V
T
T
26N50
24N50
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
JM
26N50
24N50
26N50
24N50
26N50
24N50
500
min.
Characteristic Values
2
IXFC 26N50
IXFC 24N50
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
500
500
±20
±30
230
150
300
23
21
92
84
26
24
30
3
5
max.
±100
0.20
0.23
200
4
1
V/ns
mA
mJ
µA
°C
°C
°C
°C
V~
nA
W
Ω
Ω
A
A
A
A
A
A
V
V
V
V
V
V
g
G = Gate
S = Source
Features
Applications
Advantages
See IXFH26N50 data sheet for
IGBT characteristic curves
500 V
500 V
t
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
rr
ISOPLUS 220LV
V
≤ ≤ ≤ ≤ ≤ 250 ns
DSS
G
DS (on)
D
S
HDMOS
23 A
21 A
D = Drain
I
Isolated back surface*
D25
TM
TM
DS98755A(07/03)
process
0.20 Ω Ω Ω Ω Ω
0.23 Ω Ω Ω Ω Ω
R
DS(on)
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IXFC24N50 Summary of contents
Page 1
... ± GSS 0.8•V DSS DS DSS DS(on Notes 1 & 2 © 2003 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION IXFC 26N50 IXFC 24N50 Family Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 26N50 23 24N50 21 26N50 92 JM 24N50 84 26N50 26 24N50 24 30 ≤ DSS 230 -55 ...
Page 2
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ test current: IXFC26N50 T IXFC24N50 3. See IXFH26N50 data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: ...