IXTQ200N06P IXYS, IXTQ200N06P Datasheet - Page 4

• Manufacturer Part Number: IXTQ200N06P
• Description: MOSFET N-CH 60V 200A TO-3P
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTQ200N06P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 400A, 15V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 714W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 714 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 60
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 5400
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 90
• Pd, (w): 714
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
225
200
175
150
125
100
350
300
250
200
150
100
75
50
25
50
100
0
0
2.5
0.4
0
T
J
3
= 150
f = 1MHz
0.6
5
T
3.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
J
Fig. 9. Source Current vs.
Source-To-Drain Voltage
= 150
º
C
10
-40
25
4
0.8
º
º
º
C
C
C
V
V
4.5
15
G S
S D
V
T
DS
J
- Volts
- Volts
= 25
5
1
20
- Volts
º
C
5.5
25
1.2
6
30
6.5
1.4
35
C iss
C oss
C rss
7
7.5
1.6
40
1000
100
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
R
V
I
I
T
T
D
G
DS(on)
25
DS
J
C
25
= 100A
= 10mA
= 175
= 25
Fig. 8. Transconductance
= 50V
50
Limit
Fig. 10. Gate Charge
º
Fig. 12. Forw ard-Bias
50
º
C
Safe Operating Area
C
Q
75
G
I
75
100 125 150 175 200 225 250
- nanoCoulombs
D
V
- Amperes
D S
T
J
100
DC
10
- Volts
= -40
150
25
IXTQ 200N06P
º
º
º
125
C
C
C
10ms
150
1ms
175
100µs
200
100