IXFC80N085 IXYS, IXFC80N085 Datasheet
IXFC80N085
Manufacturer Part Number
IXFC80N085
Description
MOSFET N-CH 85V 80A ISOPLUS220
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFC80N085.pdf
(2 pages)
Specifications of IXFC80N085
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.011
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
230
Rthjc, Max, (ºc/w)
0.54
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2004 IXYS All rights reserved
HiPerFET
ISOPLUS220
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
F
V
Weight
GSS
DSS
D25
L(RMS)
DM
AR
C
DSS
GS(th)
AR
J
JM
stg
L
DS(on)
DGR
GS
GSM
AS
D
ISOL
DSS
Test Conditions
V
V
V
V
V
Notes 1, 2
Test Conditions
T
T
Continuous
Transient
T
Lead current limit
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, RMS
V
S
GS
GS
C
C
C
C
C
DS
GS
DS
J
J
J
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
rr
TM
GS
, HDMOS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
MOSFET
DC
TM
D
= 250 µA
= 4 mA
= I
, V
G
= 2 Ω
T
DS
t = 1 minute leads-to-tab
= 0
TM
GS
Family
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
IXFC 80N085
min.
2.0
85
Characteristic Values
-55 ... +150
-55 ... +150
11..65/2.4..11 Nm/lb
Maximum Ratings
typ.
2500
±20
±30
320
230
150
300
1.0
85
85
80
45
75
30
max.
5
2
±100
4.0
50
11 mΩ
1 mA
V/ns
µA
mJ
V~
° C
°C
°C
°C
W
nA
V
V
V
A
A
V
V
A
A
V
g
J
ISOPLUS220
Features
Applications
Advantages
G = Gate,
S = Source
* Patent pending
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
G
V
I
R
D25
D
DSS
DS(on)
S
DS (on)
t
rr
TM
≤ ≤ ≤ ≤ ≤ 200 ns
Isolated back surface*
=
=
= 11 mΩ Ω Ω Ω Ω
D = Drain,
DS98851D(05/04)
80 A
85 V
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IXFC80N085 Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS DS(on Notes 1, 2 © 2004 IXYS All rights reserved IXFC 80N085 Family Maximum Ratings MΩ ±20 ± 320 30 1.0 ≤ DSS 230 -55 ... +150 150 -55 ... +150 300 11..65/2.4..11 Nm/lb 2500 2 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 40A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...