IXTQ44N50P IXYS, IXTQ44N50P Datasheet
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Manufacturer Part Number
IXTQ44N50P
Description
MOSFET N-CH 500V 44A TO-3P
Specifications of IXTQ44N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
5440pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
650 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
5440
Qg, Typ, (nc)
98
Trr, Typ, (ns)
400
Pd, (w)
650
Rthjc, Max, (k/w)
0.19
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque(TO-247)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250µA
= 250µA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTQ 44N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
110
650
150
300
260
1.7
44
44
55
10
6
±10
250
Max.
5.0
25
140 mΩ
V/ns
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
TO-3P (IXTQ)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
G
D25
G = Gate
S = Source
DS(on)
DSS
D
S
= 500
=
≤ ≤ ≤ ≤ ≤ 140 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
44
DS99372E(03/06)
(TAB)
A
V
Related parts for IXTQ44N50P
IXTQ44N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 44N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 44 110 1.7 ≤ DSS 650 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... Volts DS Fig Normalized to I DS(on) vs. Drain Current 3.2 3 10V GS 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 Amperes D © 2006 IXYS All rights reserved 100 = 10V 3.2 = 10V GS 7V 2.8 2 1.6 5V 1.2 0.8 0 -50 = 22A Value 125º ...
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 120 100 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 1,000 100 MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 1.2 0 1,000 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXTQ 44N50P 1 10 IXYS REF: T_44N50P (8J) 03-21-06-B.xls ...
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