IXTK170N10P IXYS, IXTK170N10P Datasheet - Page 2

• Manufacturer Part Number: IXTK170N10P
• Description: MOSFET N-CH 100V 170A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK170N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 198nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 714W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 714 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.009
• Ciss, Typ, (pf): 6000
• Qg, Typ, (nc): 198
• Trr, Typ, (ns): 120
• Pd, (w): 715
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
S
SM
d(on)
r
d(off)
f
rr
TO-268 (IXTT) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
(TO-264)
V
V
Resistive Switching Times
V
R
V
(TO-3P)
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100A/μs,
= 50V, V
= 10V, V
= 3.3Ω (External)
= 0V
= 10V, I
= 0V, V
= 10V, V
S
, V
GS
= 0V, Note 1
GS
DS
D
DS
DS
= 0V
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 60A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
Characteristic Values
50
6,162,665
6,259,123 B1
6,306,728 B1
6000
2340
Typ.
0.25
0.15
120
Typ.
730
198
107
2.0
35
50
90
33
39
72
0.21 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
170
350
1.5
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
IXTT170N10P IXTQ170N10P
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 AA ( IXTK) Outline
TO-3P (IXTQ) Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Millimeter
5.46 BSC
IXTK170N10P
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Back Side
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Inches
7,157,338B2
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
1 = Gate
2 = Drain
3 = Source
Tab = Drain