IXFH24N80P IXYS, IXFH24N80P Datasheet
IXFH24N80P
Manufacturer Part Number
IXFH24N80P
Description
MOSFET N-CH 800V 24A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFH24N80P.pdf
(4 pages)
Specifications of IXFH24N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
7200pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
650 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
100
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH24N80P
Manufacturer:
IXYS
Quantity:
15 500
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
M
Weight
T
T
GSS
DSS
D25
DM
AR
GS(th)
© 2006 IXYS All rights reserved
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
HiPerFET
, I
D
D
D
= 250 μA
= 4 mA
= 0.5 I
G
DS
= 2 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
JM
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
,
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
800
800
±30
±40
650
150
300
260
1.5
24
55
12
50
10
10
6
5
1000
±100
400
Max.
5.0
25
V/ns
° C
° C
mΩ
mJ
nA
μA
μA
°C
°C
°C
W
g
g
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
TO-268 (IXFT) Case Style
G = Gate
S = Source
TO-247 (IXFH)
TO-264 AA (IXFK)
Features
Advantages
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DS(on)
DSS
Easy to mount
Space savings
High power density
G
D
G
G
S
D
≤ ≤ ≤ ≤ ≤ 400 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
=
= 800
S
D
Tab = Drain
S
24
= Drain
D (TAB)
DS99572E(07/06)
D (TAB)
(TAB)
A
V
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IXFH24N80P Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 24N80P IXFK 24N80P IXFT 24N80P Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 1.5 ≤ DSS 650 -55 ... +150 150 -55 ...
Page 2
... A/μ 100V TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. ...
Page 3
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on) vs. Drain Current 3 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 10V 3 10V GS 2.8 6V 2.5 2.2 5V 1.9 1.6 1.3 1 0.7 0 -50 = 12A Value 125º ...
Page 4
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.3 0.4 0.5 0 Volts SD Fig. 11. Capacitance 10,000 C iss 1,000 C oss 100 MHz C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.7 0.8 0.9 1 1.00 0.10 0. 0.0001 ...