IXTQ23N60Q IXYS, IXTQ23N60Q Datasheet - Page 4

• Manufacturer Part Number: IXTQ23N60Q
• Description: MOSFET N-CH 600V 23A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ23N60Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 23
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 3300
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
35
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0
3.5
0.4
0
Fig. 9. Source Curre nt vs. Source-To-
f = 1MHz
5
0.5
4
T
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
J
= 125ºC
10
0.6
-40ºC
25ºC
4.5
Drain Voltage
T
V
15
V
J
V
G S
= 125ºC
S D
0.7
DS
- Volts
- Volts
20
- Volts
5
0.8
25
5.5
0.9
T
30
J
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
= 25ºC
C iss
C oss
C rss
6
1
35
6.5
1.1
40
0.01
0.1
50
40
30
20
10
10
1
0
8
6
4
2
0
1
Fig. 12. Maxim um Transient Therm al
0
0
T
J
V
I
I
D
G
= -40ºC
DS
= 11.5A
Fig. 8. Trans conductance
125ºC
= 10mA
10
25ºC
= 300V
20
Pulse Width - milliseconds
Fig. 10. Gate Charge
Q
Re sis tance
10
20
G
I
- nanoCoulombs
D
40
- Amperes
30
IXTQ 23N60Q
60
100
40
80
50
6,534,343
1000
100
60