IXFH21N50Q IXYS, IXFH21N50Q Datasheet - Page 4

• Manufacturer Part Number: IXFH21N50Q
• Description: MOSFET N-CH 500V 21A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH21N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 21 A
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.25
• Ciss, Typ, (pf): 3350
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 278
• Rthjc, Max, (ºc/w): 0.45
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
35
30
25
20
15
10
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
f = 1MHz
0.5
5
T
J
4
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
-40ºC
25ºC
0.6
T
J
4.5
= 125ºC
V
V
15
V
G S
S D
0.7
D S
- Volts
- Volts
20
- Volts
5
0.8
4,850,072
4,835,592
25
C oss
C iss
C rss
5.5
T
J
0.9
= 25ºC
30
4,931,844
4,881,106
6
1
35
5,034,796
5,017,508
6.5
1.1
40
5,049,961
5,063,307
1.00
0.10
0.01
40
35
30
25
20
15
10
10
5
0
9
8
7
6
5
4
3
2
1
0
5,237,481
5,187,117
Fig. 12. Maxim um Transient Therm al
0
0
1
T
V
I
I
10
J
D
G
5
DS
5,381,025
Fig. 8. Transconductance
= -40ºC
5,486,715
= 10.5A
= 10mA
125ºC
25ºC
= 250V
20
Fig. 10. Gate Charge
Pulse Width - milliseconds
10
Q
Resistance
10
30
6,306,728B1
6,404,065B1
G
15
I
D
- nanoCoulombs
- Amperes
40
20
6,162,665
6,259,123B1 6,306,728B1 6,683,344
50
IXFH 21N50Q
IXFT 21N50Q
25
100
60
6,534,343
30
70
35
80
6,583,505
1000
40
90