IXTT69N30P IXYS, IXTT69N30P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT69N30P
Manufacturer Part Number
IXTT69N30P
Description
MOSFET N-CH 300V 69A TO-268
Specifications of IXTT69N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4960pF @ 25V
Power - Max
500W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
69
Rds(on), Max, Tj=25°c, (?)
49
Ciss, Typ, (pf)
4960
Qg, Typ, (nc)
156
Trr, Typ, (ns)
330
Pd, (w)
500
Rthjc, Max, (k/w)
0.25
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTQ69N30P
IXTT69N30P
JM
,
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
200
500
150
300
260
1.5
5.5
5.0
69
69
50
10
±100
250
Max.
5.0
25
49
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
V
W
R
I
V
V
V
V
A
A
A
V
V
g
g
J
D25
DSS
DS(on)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
TO-3P (IXTQ)
TO-268 (IXTT)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
= 300
=
≤ ≤ ≤ ≤ ≤ 49 mΩ Ω Ω Ω Ω
S
G
S
D = Drain
TAB = Drain
69
DS99078E(12/05)
A
V
D (TAB)
(TAB)
Related parts for IXTT69N30P
IXTT69N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ69N30P IXTT69N30P Maximum Ratings 300 = 1 MΩ 300 GS ±20 ±30 69 200 1.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 260 1 ...
... A, -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test ...
... Fig Norm alized to I DS(on) Value vs 10V GS 3 125ºC 2.2 J 1.8 1 100 I - Amperes D © 2006 IXYS All rights reserved 180 160 140 120 100 2.5 3 3.5 4 2.8 8V 2.6 7V 2.4 2.2 1.8 6V 1.6 1.4 1.2 5V 0.8 0.6 0 ...
... T = 125º 0.4 0.5 0.6 0.7 0.8 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 100 6 25ºC 1 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss IXTQ 69N30P IXTT 69N30P Fig ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXTQ 69N30P IXTT 69N30P 100 1000 ...
Related keywords
ixtt6n120 ixtt64n25p IXTT69N30P datasheet IXTT69N30P data sheet IXTT69N30P pdf datasheet IXTT69N30P component IXTT69N30P part IXTT69N30P distributor IXTT69N30P RoHS IXTT69N30P datasheet download