IXTV36N50PS IXYS, IXTV36N50PS Datasheet - Page 2

• Manufacturer Part Number: IXTV36N50PS
• Description: MOSFET N-CH 500V 36A PLUS220-SMD
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTV36N50PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 540W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 4700
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 400
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
one or moreof the following U.S. patents:
36
32
28
24
20
16
12
8
4
0
0
1
Fig. 1. Output Char acte r is tics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
d(on)
d(off)
f
S
SM
r
rr
fs
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
2
V
V
GS
D S
4,850,072
4,881,106
= 10V
@ 25
3
- V olts
8V
7V
V
V
V
R
V
(TO-247 and TO-3P)
(PLUS220)
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
Test Conditions
Test Conditions
F
F
º
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
C
4
= 100 V, V
= 3 Ω (External)
= 20 V; I
= 10 V, V
4,931,844
5,017,508
5,034,796
= 0 V, V
= 10 V, V
= 0 V
S
6V
5.5V
5V
, V
GS
5
= 0 V,
D
DS
Characteristic Curves
5,049,961
5,063,307
5,187,117
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
6
= 0 V
D25
5,237,481
5,381,025
5,486,715
, pulse test
DSS
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
7
DSS
, I
, I
D
D
= 0.5 I
= I
6,162,665
6,259,123 B1
6,306,728 B1
(T
(T
D25
J
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
D25
80
70
60
50
40
30
20
10
0
Fig. 2. Exte nde d Output Char acte r is tics
0
Min.
Min.
6,404,065 B1
6,534,343
6,583,505
2
23
IXTV36N50P IXTV 36N50PS
Characteristic Values
Characteristic Values
4
5500
0.21
Typ.
Typ.
0.21
510
400
6
36
40
25
27
75
21
85
30
31
V
6,710,463
6,683,344
6,710,405B2
GS
8
= 10V
0.23 ° C/W
Max.
Max.
V
@ 25
10
108
D S
1.5
8V
36
12
° C/W
° C/W
- V olts
º
6,727,585
6,759,692
6,771,478 B2
nC
nC
nC
pF
pF
pF
C
ns
ns
ns
ns
ns
S
A
A
V
14
16
18
7V
6.5V
6V
5.5V
5V
20
22
24