IXTV30N60PS IXYS, IXTV30N60PS Datasheet - Page 2
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IXTV30N60PS
Manufacturer Part Number
IXTV30N60PS
Description
MOSFET N-CH 600V 30A PLUS220-SMD
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTV30N60P.pdf
(6 pages)
Specifications of IXTV30N60PS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
5050pF @ 25V
Power - Max
540W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
5050
Qg, Typ, (nc)
82
Trr, Typ, (ns)
500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTV30N60PS
Manufacturer:
IXYS
Quantity:
184
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
30
27
24
21
18
15
12
9
6
3
0
0
1
Fig. 1. Output Characteristics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
2
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
V
3
4,850,072
4,881,106
D S
V
@ 25
GS
- Volts
= 10V
4
8V
7V
º
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
C
F
F
4,931,844
5,017,508
5,034,796
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100 A/µs
5
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 4 Ω (External)
= 10 V, V
S
= 0 V, V
, V
6.5V
6V
5.5V
5V
6
GS
5,049,961
5,063,307
5,187,117
= 0 V,
D
7
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 I
= 0.5 V
8
5,237,481
5,381,025
5,486,715
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
D25
D25
, pulse test
DSS
, I
6,162,665
6,259,123 B1
6,306,728 B1
D
(T
(T
= 0.5 I
60
55
50
45
40
35
30
25
20
15
10
J
J
5
0
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
Fig. 2. Extended Output Characteristics
0
D25
3
6,404,065 B1
6,534,343
6,583,505
IXTV 30N60P IXTV 30N60PS
V
6
Min.
Min.
GS
22
Characteristic Values
Characteristic Values
= 10V
9
8V
7V
5050
Typ. Max.
Typ. Max.
0.21
12
500
@ 25
V
6,683,344
6,710,405B2
6,710,463
540
4.0
25
53
29
20
80
25
82
28
30
D S
15
- Volts
º
C
0.23 ° C/W
6.5V
1.5
6V
5.5V
5V
18
30
80
6,727,585
6,759,692
6,771,478 B2
° C/W
21
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
24
27
30