IXTH440N055T2 IXYS, IXTH440N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH440N055T2
• Description: MOSFET N-CH 55V 440A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH440N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 440A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 405nC @ 10V
• Input Capacitance (ciss) @ Vds: 25000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 440
• Rds(on), Max, Tj=25°c, (?): 0.0018
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 405
• Trr, Typ, (ns): 76
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
1.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
2.0
0.5
10
2.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
T
J
V
T
= 150ºC
3.0
J
GS
V
= 150ºC
V
SD
DS
- 40ºC
- Volts
25ºC
0.7
- Volts
20
- Volts
3.5
0.8
25
T
J
4.0
= 25ºC
0.9
30
C oss
C rss
C iss
4.5
1.0
35
5.0
1.1
40
10,000
1,000
240
200
160
120
100
80
40
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0.1
0
0
T
T
Single Pulse
V
I
I
D
G
J
C
DS
20
= 175ºC
= 220A
= 10mA
= 25ºC
50
= 27.5V
Fig. 12. Forward-Bias Safe Operating Area
40
100
R
DS(on)
Fig. 8. Transconductance
60
External Lead Limit
Fig. 10. Gate Charge
1
150
Limit
Q
80
G
I
- NanoCoulombs
D
V
- Amperes
DS
200
100
- Volts
IXTH440N055T2
IXTT440N055T2
250
120
10
140
300
T
J
= - 40ºC
160
25ºC
150ºC
350
DC
180
400
25µs
100µs
1ms
10ms
100ms
200
100