STP20NM50 STMicroelectronics, STP20NM50 Datasheet - Page 3

• Manufacturer Part Number: STP20NM50
• Description: MOSFET N-CH 500V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2663-5

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2.
3. I
Table 2.
Table 3.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
Symbol
I
Pulse width limited by safe operating area
SD
P
DM
V
V
V
T
E
I
I
I
TOT
T
ISO
T
DS
GS
stg
AR
D
D
AS
< 20A, di/dt < 400A/µs, V
j
l
(2)
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25°C, I
C
=25°C)
DD
Parameter
Parameter
Parameter
< V
D
C
(BR)DSS
= 5A, V
= 25°C
, T
DD
J
C
C
< T
= 50V)
= 25°C
= 100°C
JMAX
D²PAK / I²PAK
D²PAK / I²PAK
TO-220
TO-220
12.6
1.54
0.65
192
20
80
--
-65 to 150
Value
Value
Value
62.5
± 30
300
650
500
10
15
TO-220FP
TO-220FP
Electrical ratings
12.6
20
80
2500
0.36
45
2.8
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
A
V
V
A
A
A
V
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