IXTH13N80 IXYS, IXTH13N80 Datasheet - Page 3

no-image

IXTH13N80

Manufacturer Part Number
IXTH13N80
Description
MOSFET N-CH 800V 13A TO-247
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTH13N80

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.8
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
145
Trr, Typ, (ns)
800
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH13N80
Manufacturer:
TOSHIBA
Quantity:
1 000
Part Number:
IXTH13N80
Manufacturer:
IXYS
Quantity:
35 500
I
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
XYS reserves the right to change limits, test conditions, and dimensions.
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
2
= 25°C
-25
4
2
Case Temperature
Fax: 408-496-0670
6
DS(on)
0
8 10 12 14 16 18 20 22 24 26
4
T
vs. Drain Current
25
I
C
D
V
V
- Degrees C
- Amperes
DS
GS
= 10V
50
- Volts
6
75
8
100
10
125
150
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
IXTH 11N80
IXTM 11N80
8
6
4
2
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
0
T
V
J
DS
1
-25
-25
= 25°C
= 10V
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
IXTM 13N80
IXTH 13N80
6
75
75
7
Fax: +49-6206-503629
100
100
IXYS Semiconductor
8
125 150
125 150
9
10

Related parts for IXTH13N80