IXFH20N100P IXYS, IXFH20N100P Datasheet

no-image

IXFH20N100P

Manufacturer Part Number
IXFH20N100P
Description
MOSFET N-CH 1000V 20A TO-247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFH20N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
570 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
660W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.57 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
660 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.57
Ciss, Typ, (pf)
7300
Qg, Typ, (nc)
126
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
660
Rthjc, Max, (ºc/w)
0.190
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH20N100P
Quantity:
3
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFH20N100P
IXFT20N100P
1000
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.13/10
1000
1000
± 30
± 40
800
660
150
300
260
470
Typ.
20
50
10
15
6
5
± 200
Max.
570 mΩ
Nm/lb.in.
6.5
1.5 mA
25
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
V
g
V
I
R
t
TO-247 (IXFH)
TO-268 (IXFT)
Features
Advantages
Applications:
G = Gate
S = Source
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
= 1000V
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 20A
S
D
TAB = Drain
570mΩ Ω Ω Ω Ω
300ns
= Drain
DS99843B(04/08)
TAB
TAB

Related parts for IXFH20N100P

IXFH20N100P Summary of contents

Page 1

... GS(th ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFH20N100P IXFT20N100P Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 800 ≤ 150° 660 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. Typ. ...

Page 2

... DSS D D25 45 126 , I = 0.5 • DSS D D25 55 0.21 Characteristic Values Min. Typ. JM 0.9 9.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH20N100P IXFT20N100P Max. TO-247 (IXFH) Outline Ω Dim. Millimeter Min. Max 4.7 A 2 1.65 2 ...

Page 3

... Value 125º 25º Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 20A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFH20N100P IXFT20N100P = 10V 10A Value 10A D 100 125 150 100 125 150 ...

Page 4

... T = 125º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXFH20N100P IXFT20N100P Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 500V 10A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 ...

Related keywords