IXFR24N50Q IXYS, IXFR24N50Q Datasheet - Page 2
![MOSFET N-CH 500V 22A ISOPLUS247](/photos/5/32/53223/isoplus247_sml.jpg)
IXFR24N50Q
Manufacturer Part Number
IXFR24N50Q
Description
MOSFET N-CH 500V 22A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR24N50Q.pdf
(2 pages)
Specifications of IXFR24N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR24N50Q
Manufacturer:
IXYS
Quantity:
200
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
g(on)
gd
thJC
thCK
SD
RM
gs
T
Test Conditions
Test Conditions
F
GS
DS
F
R
S
GS
GS
GS
G
s
GS
D
DS
T
DS
DS
DSS
DSS
J
J
J
J
J
T
T
D
D
JM
T
T
min.
min.
Characteristic Values
Characteristic Values
typ.
typ.
4,835,592
4,850,072
max.
max.
4,881,106
4,931,844
5,017,508
5,034,796
ISOPLUS 247 OUTLINE
5,049,961
5,063,307
IXFR 24N50Q
IXFR 26N50Q
5,187,117
5,237,481
5,486,715
5,381,025