IXTT88N30P IXYS, IXTT88N30P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT88N30P
Manufacturer Part Number
IXTT88N30P
Description
MOSFET N-CH 300V 88A TO-268
Specifications of IXTT88N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
88 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
180
Trr, Typ, (ns)
250
Pd, (w)
600
Rthjc, Max, (k/w)
0.21
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
JM
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
220
600
150
300
260
6.0
5.5
2.0
10
88
75
60
60
10
±100
100
Max.
5.0
40
1
V/ns
m Ω
mA
mJ
nA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-264 (IXTK)
TO-3P (IXTQ)
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
G
D25
DS(on)
DSS
D
G
G
S
G
D
D
S
S
S
D = Drain
TAB = Drain
= 300
=
≤ ≤ ≤ ≤ ≤ 40
DS99129E(12/05)
88
D (TAB)
D (TAB)
D (TAB)
(TAB)
mΩ Ω Ω Ω Ω
A
V
Related parts for IXTT88N30P
IXTT88N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Maximum Ratings 300 = 1 MΩ 300 GS ±20 ± 220 2.0 ≤ DSS 600 -55 ...
... 0 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25° C unless otherwise specified 0 pulse test DS D D25 = MHz 0 DSS D = 3.3 Ω ...
... mperes D Fig. 7. Input Adm ittance 160 140 120 100 125º 25ºC -40º 4 Volts G S © 2006 IXYS All rights reserved C 3 2.8 2.6 2.4 2 1.8 1.6 6V 1.4 1.2 1 0.8 5V 0.6 0 125ºC ...
... Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S 1.00 0.10 0.01 1 IXYS reserves the right to change limits, test conditions, and dimensions 25ºC 1.2 1.4 1.6 1000 C iss 100 C oss 10 C rss Fig. 13. Maximum Transient Thermal Resistance 10 Pulse Width - milliseconds ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-264 (IXTK) Outline © 2006 IXYS All rights reserved TO-3P (IXTQ) Outline IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P TO-268 (IXTT) Outline Terminals: 1. Gate 2,4. Drain 3. Source ...
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