IXTH6N80A IXYS, IXTH6N80A Datasheet - Page 4

• Manufacturer Part Number: IXTH6N80A
• Description: MOSFET N-CH 800V 6A TO-247
• Manufacturer: IXYS

Specifications of IXTH6N80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 1.4
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
0.001
2750
2500
2250
2000
1750
1500
1250
1000
0.01
750
500
250
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
0
0
D=0.05
D=0.5
D=0.2
D=0.1
D=0.02
D=0.01
Single Pulse
V
I
I
D
G
DS
= 3.0A
= 10mA
10
= 500V
5
Gate Charge - nCoulombs
20
C
C
C
30
0.0001
iss
oss
rss
10
V
f = 1 MHz
V
CE
DS
40
- Volts
= 25V
15
50
60
20
0.001
70
80
25
Time - Seconds
0.01
0.1
10
1
9
8
7
6
5
4
3
2
1
0
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
0.0
1
IXTH 6N80
IXTM 6N80
Limited by R
0.2
0.1
to Drain Voltage
T
J
= 125°C
0.4
DS(on)
10
0.6
V
V
DS
DS
- Volts
- Volts
0.8
T
J
1
IXTH 6N80A
IXTM 6N80A
= 25°C
100
1.0
1.2
1.4
1000
10
100us
10us
100ms
1ms
10ms
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