IXFR24N50 IXYS, IXFR24N50 Datasheet
IXFR24N50
Manufacturer Part Number
IXFR24N50
Description
MOSFET N-CH 500V 24A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR24N50.pdf
(2 pages)
Specifications of IXFR24N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR24N50
Manufacturer:
IXYS
Quantity:
200
Company:
Part Number:
IXFR24N50Q
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
Weight
DM
AR
DSS
D25
GSS
J
JM
stg
L
DSS
GS(th)
DSS
DGR
GS
GSM
AR
D
ISOL
DS(on)
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
V
V
V
V
Notes 1 & 2
V
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 10 V, I
= 0 V
I
150 C, R
TM
DM
GS
, di/dt 100 A/ s, V
rr
, I
, HDMOS
Power MOSFETs
D
D
= 250uA
= 4mA
DC
TM
D
DSS
G
, V
= I
= 2
DS
T
t = 1 minute leads-to-tab
= 0
TM
GS
= 1 M
Family
DD
T
T
26N50
24N50
(T
J
J
V
DSS
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
JM
Advanced Technical Information
26N50
24N50
26N50
24N50
26N50
24N50
min.
500
IXFR 26N50
IXFR 24N50
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
500
500
104
250
150
300
20
30
26
24
96
26
24
30
6
5
max.
0.20
0.23
200
100
4
1
V/ns
mA
mJ
V~
nA
W
C
C
C
C
V
V
A
V
V
V
V
A
A
A
A
A
A
g
500 V
500 V
ISOPLUS 247
t
G = Gate
S = Source
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(<50pF)
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
rr
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
rated
V
power supplies
£ 250 ns
DSS
DS (on)
G
D
HDMOS
TM
24 A
22 A
I
D = Drain
D25
Isolated back surface*
TM
process
98526A (2/99)
0.20 W
0.23 W
R
DS(on)
1 - 2
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IXFR24N50 Summary of contents
Page 1
... 0.8 • V DSS DS DSS DS(on Notes 1 & 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advanced Technical Information IXFR 26N50 IXFR 24N50 TM Family Maximum Ratings 500 = 1 M 500 26N50 26 24N50 24 26N50 104 JM 24N50 ...
Page 2
... V, Note -di/dt = 100 100 Note: 1. Pulse test, t 300 s, duty cycle test current: IXFR26N50 T IXFR24N50 3.See IXFH26N50 data sheet for characteristic curves. © 2000 IXYS All rights reserved Characteristic Values ( unless otherwise specified) J min. typ. max. Note 4200 450 135 DSS ...