IXFH400N075T2 IXYS, IXFH400N075T2 Datasheet - Page 4

• Manufacturer Part Number: IXFH400N075T2
• Description: MOSFET N-CH 75V 400A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™ HiPerFET™r

Specifications of IXFH400N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 400A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 420nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 400
• Rds(on), Max, Tj=25°c, (?): 0.0023
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 420
• Trr, Typ, (ns): 77
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
220
200
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
2.5
0.2
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.0
0.4
10
3.5
Fig. 7. Input Admittance
0.5
Fig. 11. Capacitance
15
V
4.0
GS
T
V
0.6
V
J
T
SD
DS
- Volts
J
= 150ºC
= 150ºC
- Volts
20
- Volts
- 40ºC
25ºC
0.7
4.5
25
0.8
5.0
T
30
J
0.9
C oss
C rss
= 25ºC
C iss
5.5
35
1.0
6.0
1.1
40
10,000
1,000
240
200
160
120
100
10
80
40
10
9
8
7
6
5
4
3
2
1
0
0
1
0.1
0
0
V
I
I
T
T
Single Pulse
D
G
20
DS
J
C
= 200A
= 10mA
50
= 175ºC
= 25ºC
= 37.5V
Fig. 12. Forward-Bias Safe Operating Area
40
R
100
DS(on)
External Lead Limit
60
1
Fig. 8. Transconductance
Limit
150
80
Fig. 10. Gate Charge
Q
G
100
I
- NanoCoulombs
D
200
T
V
J
- Amperes
DS
= - 40ºC
120
- Volts
10
IXFH400N075T2
IXFT400N075T2
250
140
25ºC
150ºC
300
160
DC
180
100
25µs
100µs
1ms
10ms
100ms
350
200
400
220
450
1000
240