IXFH320N10T2 IXYS, IXFH320N10T2 Datasheet - Page 3

• Manufacturer Part Number: IXFH320N10T2
• Description: MOSFET N-CH 100V 320A TO-247
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFH320N10T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0035
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 430
• Trr, Typ, (ns): 98
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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320
280
240
200
160
120
350
300
250
200
150
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
80
40
50
0
0
0.0
0.0
0
V
0.1
0.2
GS
= 10V
50
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.2
0.4
Fig. 5. R
0.3
100
0.6
0.4
0.8
DS(on)
150
vs. Drain Current
V
0.5
1.0
GS
Normalized to I
I
V
V
D
DS
= 15V
DS
- Amperes
T
T
10V
8V
7V
0.6
200
1.2
J
J
- Volts
- Volts
= 175ºC
= 25ºC
V
GS
0.7
1.4
= 15V
10V
8V
7V
250
6V
5V
4V
0.8
1.6
D
= 160A
J
300
J
0.9
1.8
= 150ºC
= 25ºC
6V
5V
4V
1.0
2.0
350
1.1
2.2
400
1.2
2.4
400
350
300
250
200
150
100
180
160
140
120
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
50
80
60
40
20
0
0
0.0
-50
-50
Fig. 2. Extended Output Characteristics @ T
V
GS
V
GS
-25
-25
= 10V
0.5
Fig. 4. R
= 15V
Fig. 6. Drain Current vs. Case Temperature
10V
7V
0
0
1.0
External Lead Current limit
DS(on)
6V
5V
4V
vs. Junction Temperature
T
25
25
C
T
- Degrees Centigrade
J
1.5
Normalized to I
- Degrees Centigrade
50
V
50
DS
2.0
- Volts
75
75
IXFH320N10T2
IXFT320N10T2
2.5
100
I
D
D
100
= 160A Value
= 320A
125
3.0
125
I
J
D
150
= 25ºC
= 160A
3.5
150
175
175
4.0