STW11NM80 STMicroelectronics, STW11NM80 Datasheet - Page 7

• Manufacturer Part Number: STW11NM80
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 5.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4420-5

STB/F/P/W11NM80
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Transfer characteristics
vs temperature
Doc ID 9241 Rev 10
Figure 9.
Figure 13. Static drain-source on resistance
Transconductance
Electrical characteristics
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