STP21NM60ND STMicroelectronics, STP21NM60ND Datasheet - Page 3

• Manufacturer Part Number: STP21NM60ND
• Description: MOSFET N-CH 600V 17A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP21NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.17ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 48 ns
• Rise Time: 16 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8444-5

STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
I
I
E
DM
P
Viso
SD
I
V
V
T
T
AS
T
AS
I
I
TOT
DS
GS
stg
D
D
l
J
(2)
(3)
≤ 17 A, di/dt ≤ 600 A/µs, V
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
Storage temperature
Max. operating junction temperature
Avalanche characteristics
C
=25 °C)
J
Parameter
= 25 °C, I
Parameter
Parameter
DD
D
C
= 80% V
= I
= 25 °C
GS
AS
= 0)
, V
(BR)DSS
DD
C
C
= 25 °C
= 100 °C
TO-220 D²PAK I²PAK TO-247 TO-220FP
J
= 50 V)
62.5
max)
--
I
TO-220/D
2
PAK / TO-247
0.89
140
62.5
17
10
68
--
300
2
Max value
–55 to 150
PAK
Value
610
±25
600
150
8.5
40
50
TO-220FP
Electrical ratings
2500
17
10
68
30
4.17
62.5
(1)
(1)
(1)
°C/W
°C/W
Unit
Unit
Unit
V/ns
mJ
°C
°C
W
A
V
V
A
A
A
V
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