IXTH5N100A IXYS, IXTH5N100A Datasheet - Page 3

MOSFET N-CH 1000V 5A TO247AD

IXTH5N100A

Manufacturer Part Number
IXTH5N100A
Description
MOSFET N-CH 1000V 5A TO247AD
Manufacturer
IXYS
Datasheet

Specifications of IXTH5N100A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Forward Transconductance Gfs (max / Min)
6 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
5
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
2600
Qg, Typ, (nc)
88
Trr, Typ, (ns)
900
Pd, (w)
180
Rthjc, Max, (k/w)
0.7
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q917004

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH5N100A
Manufacturer:
IXYS
Quantity:
4 250
Part Number:
IXTH5N100A
Manufacturer:
IXYS
Quantity:
35 500
© 2000 IXYS All rights reserved
3.0
2.8
2.6
2.4
2.2
2.0
1.8
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
-25
T
J
= 25°C
J
= 25°C
5
2
Case Temperature
DS(on)
0
10
T
vs. Drain Current
4
25
I
C
V
D
V
GS
- Degrees C
- Amperes
DS
= 10V
V
15
- Volts
50
GS
6
= 10V
V
GS
5N100
75
= 15V
20
100 125 150
8
5N100A
25
7V
6V
10
30
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
9
8
7
6
5
4
3
2
1
0
-50
-50
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
IXTH 5 N100
IXTM 5 N100
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
0
0
T
T
T
25
25
J
J
J
V
I
D
= 25°C
- Degrees C
- Degrees C
GS
= 2.5A
50
50
- Volts
75
75
IXTH 5 N100A
IXTM 5 N100A
100 125 150
100 125 150
BV
DSS
3 - 4

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