STW20NM50FD STMicroelectronics, STW20NM50FD Datasheet
STW20NM50FD
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STW20NM50FD Summary of contents
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... June 2002 N-CHANNEL 500V - 0.22 - 20A TO-247 R I DS(on) D <0. Parameter = 25° 100° 25°C C (1)I 20A, di/dt 400A/µ (*)Limited only by maximum temperature allowed STW20NM50FD TO-247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 ± 214 1.42 20 –65 to 150 150 (BR)DSS j ...
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... STW20NM50FD THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ...
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... I = 20A 10V GS Test Conditions V = 400V 4 10V G GS (see test circuit, Figure 5) Test Conditions di/dt = 100A/µ 60V 150° (see test circuit, Figure 5) Thermal Impedance STW20NM50FD Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. Max. Unit 1.5 V 245 ...
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... STW20NM50FD Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STW20NM50FD 5/8 ...
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... STW20NM50FD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STW20NM50FD inch TYP. MAX. 0.20 0.10 0.03 0.05 0.11 0.07 0.09 0.13 0.43 0.62 0.79 0.17 0.72 0.58 1.36 0.21 0.11 5º 60º ...
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... STW20NM50FD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...