IXFR58N20Q IXYS, IXFR58N20Q Datasheet
IXFR58N20Q
Manufacturer Part Number
IXFR58N20Q
Description
MOSFET N-CH 200V 50A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR58N20Q.pdf
(2 pages)
Specifications of IXFR58N20Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 29A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
98
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
V
V
V
V
Note 2
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
V
V
S
GS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Note 1
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 0 V
= 10 V, I
= 20 V, V
= V
I
150 C, R
TM
DM
GS
DSS
, di/dt 100 A/ s, V
, I
Power MOSFETs
D
D
= 250 A
= 4mA
D
TM
= 29A
DS
G
= 2
= 0
Q-Class
t = 1 min
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
200
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
IXFR 58N20Q
typ.
2500
200
200
232
300
150
250
1.0
20
30
50
58
30
5
max.
5
100 nA
40 m
25 A
4.0 V
1 mA
V/ns
mJ
V~
W
C
C
C
C
V
V
V
V
V
A
A
A
g
J
ISOPLUS 247
G = Gate
S = Source
* Patent pending
Features
Applications
Advantages
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
IXYS advanced low Q
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic diode
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
E153432
V
I
R
t
D25
G
rr
DSS
DS(on)
D
TM
200 ns
D = Drain
Isolated back surface*
=
=
=
DS98591B(01/03)
g
process
200
50
40 m
V
A
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IXFR58N20Q Summary of contents
Page 1
... A DSS 4mA GS(th GSS DSS DS DSS 29A DS(on Note 2 © 2003 IXYS All rights reserved IXFR 58N20Q Maximum Ratings 200 = 1 M 200 232 DSS 300 -55 ... +150 150 -55 ... +150 250 2500 5 Characteristic Values ( unless otherwise specified) J min. typ. max. 200 2 ...
Page 2
... Note: 1. Pulse width limited Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Note 2 24 ...