IXFT20N60Q IXYS, IXFT20N60Q Datasheet

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IXFT20N60Q

Manufacturer Part Number
IXFT20N60Q
Description
MOSFET N-CH 600V 20A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFT20N60Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
3700
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t
V
S
J
J
C
C
C
C
C
J
C
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
, di/dt
DSS
, I
D
D
DC
D
=
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
100 A/ s, V
= 2
DS
= 0
A
D25
TO-247 AD
TO-268
GS
= 1 M
DD
T
T
J
J
= 125 C
= 25 C
V
DSS
JM
,
2 %
IXFH 20N60Q
IXFT 20N60Q
600
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
600
600
300
150
300
1.5
30
40
20
80
20
30
15
6
4
0.35
100
Max.
4.5
25
1
V/ns
mA
mJ
nA
W
V
V
C
C
C
C
V
A
V
V
A
A
A
g
g
V
J
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G = Gate
S = Source
Features
Advantages
process
IXYS advanced low gate charge
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
R
V
Easy to mount
Space savings
High power density
t
I
rr
D25
DSS
DS(on)
DS (on)
250ns
G
=
=
=
D = Drain
TAB = Drain
S
DS98549C(03/03)
0.35
600 V
20 A
(TAB)
(TAB)

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IXFT20N60Q Summary of contents

Page 1

... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH 20N60Q IXFT 20N60Q Maximum Ratings 600 = 1 M 600 1 DSS 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values Min. Typ. Max. 600 2 ...

Page 2

... -di/dt = 100 Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 10 20 ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg 7 2 7 Volts DS Fig Normalized to I DS(on) Value Amperes D © 2003 IXYS All rights reserved D25 25º 25º IXFH 20N60Q IXFT 20N60Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. ...

Page 4

... C iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 ...

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