IXTH10N100D IXYS, IXTH10N100D Datasheet

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IXTH10N100D

Manufacturer Part Number
IXTH10N100D
Description
MOSFET N-CH 1000V 10A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH10N100D

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
1.4 Ohm @ 10A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vds, Max, (v)
1000
Id(on), Min, (a)
10
Rds(on), Max, (?)
1.40
Vgs(off), Max, (v)
-3.5
Ciss, Typ, (pf)
2500
Crss, Typ, (pf)
100
Qg, Typ, (nc)
0.31
Pd, (w)
400
Rthjc, Max, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH10N100D
Manufacturer:
IXYS
Quantity:
35 500
High Voltage
MOSFETs
N-Channel, Depletion Mode
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
GSS
DSS
D(on)
J
JM
stg
L
SOLD
DSX
DGX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
V
V
V
V
V
V
TO-268
Test Conditions
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= -10V, I
= 25V, I
= ±30V, V
= V
= 10V, I
= 0V, V
DSX
, V
DS
D
D
D
= 250μA
= 10A, Note 1
GS
= 25V, Note 1
DS
= 250μA
= -10V
= 0V
(TO-247)
GS
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTH10N100D
IXTT10N100D
1000
Characteristic Values
Min.
-1.5
- 55 ... +150
- 55 ... +150
Maximum Ratings
1.13 / 10
1000
1000
±30
±40
400
150
300
260
Typ.
6.0
4.0
10
20
1.0
±100 nA
- 3.5
Nm/lb.in.
Max.
500 μA
1.4
25 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
A
V
A
g
g
V
I
R
TO-268 (IXTT)
TO-247 (IXTH)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Level Shifting
• Triggers
• Solid State Relays
• Current Regulators
• Active Load
D25
Flammability Classification
DS(on)
DSX
G
D
S
G
≤ ≤ ≤ ≤ ≤
=
=
S
D
TAB = Drain
1.4Ω Ω Ω Ω Ω
10A
1000V
= Drain
D (TAB)
DS99529A(04/09)
D (TAB)

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IXTH10N100D Summary of contents

Page 1

... V = -10V DSS DS DSX 10V 10A, Note 1 DS(on 0V 25V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTH10N100D IXTT10N100D Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ± 400 - 55 ... +150 150 - 55 ... +150 300 260 1. 4.0 6.0 Characteristic Values Min. ...

Page 2

... I = 0.5 • DSX D D25 58 0.21 Characteristic Values Min. Typ. 1.1 850 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH10N100D IXTT10N100D TO-247 (IXTH) Outline Max Terminals Gate Source nC Dim. Millimeter Min. Max 4.7 A 2.2 0.31 °C/W ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V GS 2.4 2 10A D 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade J IXTH10N100D IXTT10N100D Value 100 125 150 75 100 125 150 IXYS REF: T_10N100D(7N)3-31-09-B ...

Page 4

... J 25ºC 4 125º Amperes D Fig. 10. Breakdown & Threshold Voltages vs. Junction Temperature 1.5 1.4 V GS(off) 1.3 1.2 1.1 1.0 BV 0.9 0.8 0.7 -50 - Degrees Centigrade J Fig. 12. Capacitance C iss C oss C rss MHz Volts DS IXTH10N100D IXTT10N100D 25V -10V DSS GS 75 100 125 150 ...

Page 5

... 25ºC C Single Pulse 25µs 10.0 100µs 1ms 1.0 10ms 100ms DC 0.1 1,000 10,000 Fig. 15. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTH10N100D IXTT10N100D Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 100 1,000 V - Volts DS 0 150ºC ...

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