IXFH12N90P IXYS, IXFH12N90P Datasheet - Page 2

• Manufacturer Part Number: IXFH12N90P
• Description: MOSFET N-CH 900V 12A TO-247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFH12N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 900 mOhms
• Forward Transconductance Gfs (max / Min): 8.2 S
• Drain-source Breakdown Voltage: 900 V
• Continuous Drain Current: 12 A
• Power Dissipation: 380 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.90
• Ciss, Typ, (pf): 3080
• Qg, Typ, (nc): 56
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 380
• Rthjc, Max, (ºc/w): 0.33
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
PLUS220SMD (IXFV_S) Outline
SD
Gi
iss
oss
rss
thJC
thCS
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
Gate input resistance
V
V
(TO-247, PLUS220)
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 6A, -di/dt = 100A/μs
= I
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, V
= 2Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
5.0
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
3080
Typ.
0.25
200
0.9
7.8
8.2
1.7
33
32
56
18
27
34
50
68
0.33 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
300 ns
1.5
12
48
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
IXFH12N90P IXFV12N90P
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXFH) Outline
PLUS220 (IXFV) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
1
2
6,771,478 B2 7,071,537
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
21.46
16.26
20.32
BSC
7,005,734 B2
7,063,975 B2
Max.
IXFV12N90PS
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
e
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242
Inches
7,157,338B2
Max.
BSC
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216