IXTK200N10P IXYS, IXTK200N10P Datasheet - Page 2

• Manufacturer Part Number: IXTK200N10P
• Description: MOSFET N-CH 100V 200A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK200N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 500µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 800W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 7600
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 100
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
one or moreof the following U.S. patents:
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
= 50 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
GS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
60
Characteristic Values
Characteristic Values
7600
2900
Typ.
Typ.
0.15
860
150
240
135
100
3.0
97
30
35
90
50
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.18°C/W
200
400
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-264 (IXTK) Outline
6,683,344
6,710,405B2
6,710,463
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
IXTK 200N10P
Millimeter
5.46 BSC
6,727,585
6,759,692
6,771,478 B2
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072