IXFT13N80Q IXYS, IXFT13N80Q Datasheet
IXFT13N80Q
Manufacturer Part Number
IXFT13N80Q
Description
MOSFET N-CH 800V 13A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH13N80Q.pdf
(2 pages)
Specifications of IXFT13N80Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
3250pF @ 25V
Power - Max
250W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.70
Ciss, Typ, (pf)
3250
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT13N80Q
Manufacturer:
IXYS
Quantity:
300
Company:
Part Number:
IXFT13N80Q
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q Class
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 250 mA
= 4 mA
, V
= 0.5 I
G
= 2 W
DS
= 0
D25
GS
= 1 MW
DD
T
T
£ V
J
J
= 25°C
= 125°C
DSS
g
JM
,
Min. Typ.
800
IXFH 13N80Q
IXFT 13N80Q
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
800
800
±20
±30
750
250
150
300
13
52
13
28
5
6
4
±100
0.70
Max.
4.5
50
1
V/ns
mA
mJ
mJ
nA
mA
°C
°C
°C
°C
W
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
t
TO-268 (D3) (IXFT) Case Style
TO-247 AD (IXFH)
G = Gate
S = Source
Features
• IXYS advanced low Q
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
• Fast switching
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
D25
rr
rated
flammability classification
DSS
DS(on)
£ 250 ns
DS (on)
G
D = Drain
TAB = Drain
=
=
= 0.70 W
S
g
800 V
process
13 A
98626 (6/99)
(TAB)
(TAB)
1 - 2
Related parts for IXFT13N80Q
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFT13N80Q Summary of contents
Page 1
... DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 13N80Q IXFT 13N80Q g Maximum Ratings 800 = 1 MW 800 GS ±20 ± 750 £ V ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 13N80Q IXFT 13N80Q TO-247 AD (IXFH) Outline ...