IXTJ36N20 IXYS, IXTJ36N20 Datasheet - Page 2

• Manufacturer Part Number: IXTJ36N20
• Description: MOSFET N-CH 200V 36A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXTJ36N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 2970pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.07
• Ciss, Typ, (pf): 2970
• Qg, Typ, (nc): 106
• Trr, Typ, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.65
• Package Style: TO-268 (I3 - PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
SM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
g(on)
gs
gd
Test Conditions
Test Conditions
F
F
R
DS
GS
S
GS
GS
G
GS
S
GS
D
DS
DS
DS
D25
JM
J
J
DSS
DSS
J
J
D
D
D25
D25
min.
min.
Characteristic Values
Characteristic Values
typ.
typ.
4,850,072
max.
max.
4,881,106
4,931,844
5,017,508
5,034,796
Leaded TO-268 Package Outline
5,049,961
5,063,307
IXFJ 36N30
5,187,117
5,237,481
5,486,715
5,381,025