IXTT30N60P IXYS, IXTT30N60P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT30N60P
Manufacturer Part Number
IXTT30N60P
Description
MOSFET N-CH 600V 30A TO-268 D3
Specifications of IXTT30N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
5050pF @ 25V
Power - Max
540W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
5050
Qg, Typ, (nc)
82
Trr, Typ, (ns)
500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-247
TO-3P
PLUS220
TO-268
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
D
= 250 µA
= 250µA
= 0.5 I
G
DS
= 4 Ω
= 0
D25
(TO-3P, TO-247)
(PLUS220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
JM
,
600
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
540
150
300
260
1.5
6.0
5.5
4.0
5.0
30
80
30
50
10
±100
250
240
Max.
5.0
25
N/lb.
V/ns
m Ω
mJ
nA
µA
µA
° C
° C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
g
J
TO-3P (IXTQ)
TO-268 (IXTT)
PLUS220 (IXTV)
PLUS220 (IXTV...S)
G = Gate
S = Source
Features
l
l
l
l
TO-247 (IXTH)
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
V
I
R
G
D25
DS(on)
DSS
G
D
G
D
S
D
G
S
S
G
= 600
= 30
≤ ≤ ≤ ≤ ≤ 240 m Ω Ω Ω Ω Ω
S
S
D = Drain
TAB = Drain
DS99251E(12/05)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXTT30N60P
IXTT30N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ ...
... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 30N60P IXTQ 30N60P IXTT 30N60P Test Conditions (T = 25° C, unless otherwise specified 0.5 I ...
... I - Amperes D Fig. 7. Input Adm ittance º 125 º º - 3 Volts G S © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P C 3.4 = 10V 3.1 7V 2.8 2.5 6V 2.2 5.5V 1.9 1.6 1.3 5V 0.7 4.5V 0 º 125 º ...
... olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss C rss Fig. 13. Maximum Transient Thermal Resistance ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 S 6.15 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved IXTH 30N60P IXTQ 30N60P IXTT 30N60P Package Outline Drawings Inches Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 ...
... PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Package Outline Drawings ...
Related keywords
ixtt30n50l2 ixtt30n60l2 IXTT30N60P datasheet IXTT30N60P data sheet IXTT30N60P pdf datasheet IXTT30N60P component IXTT30N60P part IXTT30N60P distributor IXTT30N60P RoHS IXTT30N60P datasheet download