IXFT23N60Q IXYS, IXFT23N60Q Datasheet

IXFT23N60Q

Manufacturer Part Number

IXFT23N60Q

Description

MOSFET N-CH 600V 23A TO-268(D3)

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFH23N60Q.pdf (4 pages)

Specifications of IXFT23N60Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

320 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

4.5V @ 4mA

Gate Charge (qg) @ Vgs

90nC @ 10V

Input Capacitance (ciss) @ Vds

3300pF @ 25V

Power - Max

400W

Mounting Type

Surface Mount

Package / Case

TO-268

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.32 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

23 A

Power Dissipation

400 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt,

Low Gate Charge and Capacitances

Preliminary Data Sheet

Symbol

dv/dt

Weight

Symbol

D25

GSS

DSS

stg

DGR

GSM

GS(th)

DSS

DS(on)

= 25°C, unless otherwise specified)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

Test Conditions

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

≤ 150°C, R

= 25°C

= 0 V, I

= V

= ±30 V

= V

= 0 V

= 10 V, I

, di/dt ≤ 100 A/µs, V

DSS

, I

= 250 µA

= 4 mA

, V

= 0.5 I

= 2 Ω

= 0

D25

TO-247 AD

TO-268

= 1 MΩ

≤ V

= 125°C

= 25°C

DSS

IXFH 23N60Q

IXFT 23N60Q

600

Min. Typ.

2.0

Characteristic Values

-55 ... +150

Maximum Ratings

1.13/10 Nm/lb.in.

600

±30

±40

400

150

300

1.5

±100

0.32

Max.

4.5

V/ns

°C

µA

Ω

TO-247 AD (IXFH)

TO-268 (IXFT) Case Style

G = Gate

S = Source

Features

Advantages

process

IXYS advanced low gate charge

International standard packages

Low gate charge and capacitance

- easier to drive

- faster switching

Low R

Unclamped Inductive Switching (UIS)

rated

Molding epoxies meet UL 94 V-0

flammability classification

Easy to mount

Space savings

High power density

D25

DSS

DS(on)

≤ ≤ ≤ ≤ ≤ 250ns

DS (on)

D = Drain

TAB = Drain

0.32 Ω Ω Ω Ω Ω

600 V

DS99055(06/03)

23 A

(TAB)

Related parts for IXFT23N60Q

IXFT23N60Q Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 23N60Q IXFT 23N60Q Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. ...

Page 2

... -di/dt = 100 A/µ Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. , pulse test 10 20 ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg 7 2 7 Volts DS Fig Normalized to I DS(on) Value Amperes D © 2003 IXYS All rights reserved D25 25º 25º IXFH 23N60Q IXFT 23N60Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) D25 ...

Page 4

... C iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 ...

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